RTA annealling up to 1200 oC at ramp rates up to 300 oC/s in nitrogen gas. The system can process wafers up to 150 mm.
The AVT PEO 601 oxidation furnace has the ability to grow thermal SiO2 and SiOxN1-x up to 1100 oC at ramp rates up to 100 oC/min for a wafer batch or 20 oC/s for single wafers. The system can take 25 off 100 mm diameter wafers. Gases include O2, N2O, N2 and forming gas.
3 quartz furnace tubes with 2 inch capability for wet oxidation.