Home > Capability > Sensors

Glasgow has a enormous number of technologies that can be used as sensors. Below a few of the many technologies are demonstrated.

Resonator

Terahertz Dual-band Resonator

Y. Ma et al. "Terahertz dual-band resonator on silicon" Optics Letters 35, 469 (2010): doi:10.1364/OL.35.000469

SiGe QCL

Si/SiGe Terahertz Superlattice LEDs

G. Matmon et al. "Si/SiGe quantum cascade superlattice designs for terahertz emission" J. Appl. Phys. 107, 053109 (2010): doi:10.1063/1.3319653

QCL

Mid-infrared Quantum Cascade Lasers

C.C. Nshii et al. "A unidirectional quantum cascade ring laser" Appl. Phys. Lett. 97, 231107 (2010): doi:10.1063/1.3524200

X-ray Detector

Medipix2 X-ray Detector

D. Pennicard et al. "Synchrotron Tests of a 3D Medipix2 X-Ray Detector" IEEE Trans. Nuclear Sci. 57, 387 (2010): doi:10.1109/TNS.2009.2037746

Large Area X-ray Sensors for Medical Applications

Large Area X-ray Sensors for Medical Applications

S.E. Bohndiek et al. "Characterization and Testing of LAS: A Prototype `Large Area Sensor' With Performance Characteristics Suitable for Medical Imaging Applications" IEEE Trans. Nuclear Sci. 56, 2938 (2009): doi:10.1109/TNS.2009.2029575

Vanilla

Active Pixel Sensors for Medical Applications

A. Blue et al. "Characterisation of Vanilla - A novel active pixel sensor for radiation detection" Nuclear Instru. Methods Phys. Res. A 581, 287 (2007): doi:10.1016/j.nima.2007.07.124

STEM cells

Ultrasensitive Detection and Characterisation of Biomolecules

E. Hendry et al. "Ultrasensitive detection and characterization of biomolecules using superchiral fields" Nature Nanotech. 5, 783 (2010): doi:10.1038/NNANO.2010.209

Proton Camera Array Technology

Proton Camera Array Technology

M.J. Milgrew and D.R.S. Cumming "A Proton Camera Array Technology for Direct Extracellular Ion Imaging" 2008 IEEE Int. Sympos. Industrial Elec. 1-5, 2524 (2008):

Microfluidics

Microfluidics

M. Zagnoni and J.M. Cooper "On-chip electrocoalescence of microdroplets as a function of voltage, frequency and droplet size" Lab on a Chip 28, 2652 (2009): doi:10.1039/b906298j

Split Ring Resonators

Split Ring Resonators for Molecular Spectroscopy

A.W. Clark et al. "Nanophotonic split-ring resonators as dichroics for molecular spectroscopy" Appl. Phys. Lett. 93, 023121 (2008): doi:10.1063/1.2956389

ISFET

Ion Sensitive Field Effect Transistors

M.J. Milgrew et al. "Matching the Transconductance Characteristics of CMOS ISFET Arrays by Removing Trapped Charge" IEEE Trans. Elec. Dev. 55, 1074 (2008): doi:10.1109/TED.2008.916680

ISFET

Alcohol Sensor

C.A. Mills et al. "Polymer-based micro-sensor paired arrays for the determination of primary alcohol vapors" Sensor Actuators B 125, 85 (2007): doi:10.1016/j.snb.2007.01.039

STEM cells

Interrogating STEM cells using Microfluidics

C.A. Mills et al. "Microfluidic single cell arrays to interrogate signalling dynamics of individual, patient-derived hematopoietic stem cells" Lab on a Chip 9, 2659 (2009): doi:10.1039/b902083g

Tumour

Microfluidic Analysis of Tumor Apoptosis

D. Wlodkowic et al. "Microfluidic Single-Cell Array Cytometry for the Analysis of Tumor Apoptosis" Anal. Chem. 81, 5517 (2009): doi:10.1021/ac9008463

DFB Lasers

DFB Lasers

F. Pozzi et al. "Dual-Wavelength InAlGaAs-InP Laterally Coupled Distributed Feedback Laser" IEEE Photonics Tech. Lett. 18, 2563 (2006): doi:10.1109/LPT.2006.887205

THz Mode Locked Laser

THz Mode Locked Lasers

D.A. Yanson et al. "Ultrafast harmonic mode-locking of monolithic compound-cavity laser diodes incorporating photonic-bandgap reflectors" IEEE J. Quantum Elec. 38, 1 (2002): doi:10.1109/3.973313

Gunn diode

Planar Gunn Diodes

A. Khalid et al. "A Planar Gunn Diode Operating Above 100 GHz" IEEE Elec. Dev. Lett. 28, 849 (2007): doi:10.1109/LED.2007.904218

GaN FET

Thermal Al2O3 Passivated GaN FETs

S. Taking et al. "Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium" Elec. Lett. 46, 301 (2010): doi:10.1049/el.2010.2781

T-gate HEMT

50 nm T-gate HEMTs operating with fT = 440 GHz

K. Elgaid et al. "50 nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz" IEEE Elec. Dev. Lett. 26, 784 (2005): doi:10.1109/LED.2005.857716