Home > Capability > Nanofabrication

The University of Glasgow has 35 years experience of nanofabrication and is one of the few places in the world that can undertake sub-10 nm electron beam lithography and sub-5nm single line nanolithography across substrates with dimensions up to 200 mm. We have propriotary layer-to-layer alignment techniques that can deliver 0.46 nm rms alignment allow reproducible gaps between layers of 1 nm. Our experience also enables fully integrated devices and circuits along with 3D lithographic patterned at the nanoscale.

Most of the research is undertaken by the Electronics and Nanoscale Division - School of Engineering.

Some of the research was undertaken as part of the former Electronics and Electrical Engineering Department at Glasgow.

Si nanowire

Molecular POM Nanoscale Flash Memory

C. Busche et al. "Design and fabrication of memory devices based on nanoscale polyoxometalate clusters" Nature 515, pp. 545 - 549 (2014) DOI: 10.1038/nature13951

Si nanowire

Silicon Nanowire Down to 4 nm Device Performance Limits

M. Mirza et al. "Determining the Electronic Performance Limitations in Top-Down-Fabricated Si Nanowires with Mean Widths Down to 4 nm" Nano Letters 14(11), pp. 6056 - 6060 (2014) DOI: 10.1021/nl5015298

3 nm wire

The Smallest Electron Beam Lithography Metal Pattern of 3 nm

D.R.S. Cumming et al. "Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resist" 68, 322 (1996): doi:10.1063/1.116073

Dose

Sub 10 nm Electron Beam Lithography

S. Thoms and D. S. Macintyre "Linewidth metrology for sub-10-nm lithography" J. Vac. Sci. Technol. B 28, C6H6 (2010): doi:10.1116/1.3505129

1 nm gap

1 nm Gaps Between Metal Electrodes: Beating the Proximity Effect

P. Steinmann and J.M.R. Weaver "Fabrication of sub-5 nm gaps between metallic electrodes using conventional lithographic techniques" J. Vac. Sci. Technol. 22(6), 3178 (2005): doi:110.1116/1.1808712

Dose

Picometre Layer-to-layer Alignment

K.E. Docherty et al. "Improvements to the alignment process in a commercial vector scan electron beam lithography tool" Microelec. Eng. 85, 761 (2008): doi:10.1016/j.mee.2008.01.081

Dose

Robust Correlation Based Layer-to-layer Alignment

K.E. Docherty et al. "High robustness of correlation-based alignment with Penrose patterns to marker damage in electron beam lithography" Microelec. Eng. 86, 532 (2009): doi:10.1016/j.mee.2008.11.037

hydrophobic

Superhydrophobic and Hydrophilic Nanopatterns

E. Martines et al. "Superhydrophobicity and Superhydrophilicity of Regular Nanopatterns" Nano Letters 5, 2097 (2005): doi:10.1021/nl051435t

hydrophobic

Cell Scaffolds

M.J. Dalby et al. "Nucleus alignment and cell signaling in fibroblasts: response to a micro-grooved topography" Exp. Cell Research 284, 274 (2003): doi:10.1016/S0014-4827(02)00053-8

PV

Development of Roll-to-roll Nanoimprint Lithography for Cheap Large Area Nanofabrication Manufacturing

A.Z. Khokhar et al. "Nanofabrication of gallium nitride photonic crystal light-emitting diodes" Microelec. Eng. 87, 2200 (2010): doi:10.1016/j.mee.2010.02.003

rock

Magnetic Nanosensors for Rock Analysis

D. Krasa et al. "Nanofabrication of two-dimensional arrays of magnetite particles for fundamental rock magnetic studies" J. Geophysical Research 114, B02104 (2009): doi:10.1029/2008JB006017

magnet

Magnetic Nanoelements

X. Liu et al. "Reversal mechanisms and metastable states in magnetic nanoelements" J. Appl. Phys. 96, 5173 (2004): doi:10.1063/1.1803102

CNT

Single Carbon Nanotubes for AFM tips

J.P. Edgeworth et al. "Growth and morphology control of carbon nanotubes at the apexes of pyramidal silicon tips" Nanotechnology 21, 105605 (2010): doi:10.1088/0957-4484/21/10/105605

AFM

Thermal AFM tips

J.P. Edgeworth et al. "Growth and morphology control of carbon nanotubes at the apexes of pyramidal silicon tips" Nanotechnology 21, 105605 (2010): doi:10.1088/0957-4484/21/10/105605

diamond

The smallest gate-length diamond transistor of 50 nm

D.A.J. Moran et al. "Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications" Microelec. Eng. 8, 1067 (2009): doi:10.1016/j.mee.2010.11.029

Silicon waveguide

10 mm Long Low Loss Silicon Waveguides (loss < 0.9 dB/cm)

M. Gnan et al. "Fabrication of low loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist" Elec. Lett. 44, 115 (2008): doi:10.1049/el:20082985