Home > MBE Growth of III-V Semiconductors

The Molecular Beam Epitaxy (MBE) Research Group in Glasgow has nearly 30 years experience with the MBE growth and characterisation of III-V semiconductors. The Group operates one Varian 75 mm Mod Gen II machine and a dual-chamber 100 mm Gen III, manufactured by Veeco Instruments Inc. The Gen II is equipped with In, Ga, Al, As2, Ge, Si and Be sources, and has been used to grow a wide variety of materials on both GaAs and InP substrates. The Gen III was purchased to enable the growth of high-k dielectric stacks for the realisation of III-V MOSFETs and has a chamber for III-V semiconductor growth and a second chamber for oxide deposition. The Group routinely grows world-class epitaxial material and structures to support a wide range of projects in high speed devices and opto-electronics, including so-called third generation photo-voltaic (solar) cells.

Apparatus for characterising the electrical, optical and structural properties of MBE samples includes a 4-300 K Hall effect apparatus; a high resolution 10 K photoluminescence spectrometer for studies from 600 nm out to 1.6 µm; a fast Fourier transform infrared (FTIR) spectrometer to measure material and devices properties in the wavelength range from 900 nm to 18 µm; C-V and I-V measuring equipment, and a bench-top double crystal X-ray diffractometer for determining the composition of epitaxial layers. The Group collaborates with colleagues in the School of Physics and Astronomy on high resolution transmission electron microscopy (TEM) and quantum transport measurements at 1.2 K, and makes extensive use of AFM equipment located in the James Watt Nanofabrication Centre. The MBE Research Group is located in a purpose-built facility off-campus on the West of Scotland Science Park.

InAs surface