Home > Capability > III-V Technology

Glasgow has enormous experience of demonstarting III-V devices, circuits and systems. The technology below is only a fraction of the capability in III-V technology.
T-gate HEMT

50 nm T-gate HEMTs operating with fT = 440 GHz

K. Elgaid et al. "50 nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz" IEEE Elec. Dev. Lett. 26, 784 (2005): doi:10.1109/LED.2005.857716

T-gate HEMT

22 nm T-gate HEMTs

S. Bentley et al. "Fabrication of 22 nm T-gates for HEMT applications" Microelec. Eng. 85, 1375 (2008): doi:10.1016/j.mee.2008.01.058

T-gate HEMT

10 nm T-gate HEMTs

S. Bentley et al. "Two methods for realising 10 nm T-gate lithography" Microelec. Eng. 86, 1067 (2009): doi:10.1016/j.mee.2008.12.029

III-V CMOS

III-V CMOS

R.J.W. Hill et al. "Enhancement-mode GaAs MOSFETs with an In0.3Ga0.7As channel, a mobility over 5000 cm2/V.s, and a transconductance of over 475 µS/µm" IEEE Elec. Dev. Lett. 28, 1080 (2007): doi:10.1109/LED.2007.910009

III-V CMOS

III-V CMOS

R.J.W. Hill et al. "1 µm gate length In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/µm" Elec. Lett. 44, 498 (2008): doi:10.1049/el:20080470

III-V CMOS

Self-aligned 100 nm Gatelength III-V CMOS

X. Li et al. "Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors" J. Vac. Sci. Technol. 27, 3153 (2009): doi:10.1116/1.3256624

Gunn diode

Planar Gunn Diodes

A. Khalid et al. "A Planar Gunn Diode Operating Above 100 GHz" IEEE Elec. Dev. Lett. 28, 849 (2007): doi:10.1109/LED.2007.904218

GaN FET

Thermal Al2O3 Passivated GaN FETs

S. Taking et al. "Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium" Elec. Lett. 46, 301 (2010): doi:10.1049/el.2010.2781

Ridge Laser

Ridge Lasers

L. Hou et al. "160 GHz passively mode locked AlGaInAs 1.55 µm strained quantum well compound cavity laser" IEEE Photonics Tech. Letts. 22, 727 (2010): doi:10.1109/LPT.2010.2045228

DFB Lasers

DFB Lasers

F. Pozzi et al. "Dual-Wavelength InAlGaAs-InP Laterally Coupled Distributed Feedback Laser" IEEE Photonics Tech. Lett. 18, 2563 (2006): doi:10.1109/LPT.2006.887205

THz Mode Locked Laser

THz Mode Locked Lasers

D.A. Yanson et al. "Ultrafast harmonic mode-locking of monolithic compound-cavity laser diodes incorporating photonic-bandgap reflectors" IEEE J. Quantum Elec. 38, 1 (2002): doi:10.1109/3.973313

Microring Laser

Microring Lasers

S. Furst et al. "Modal structure, directional and wavelength jumps of integrated semiconductor ring lasers: Experiment and theory" Appl. Phys. Lett. 93, 251109 (2008): doi:10.1063/1.3052601

Microdisc Laser

Microdisc Lasers

L. Gelens et al. "Exploring Multistability in Semiconductor Ring Lasers: Theory and Experiment" Phys. Rev. Lett. 102, 193904 (2009): doi:10.1103/PhysRevLett.102.193904

PBG Device

Photonic Bandgap Devices

T.F. Krauss, R.M. De La Rue and S. Brand "Two-dimensional photonic-bandgap structures operating at near-infrared wavelengths" Nature 383, 699 (1996): doi:10.1038/383699a0

Modulator

Photonic Bandgap Switch

E.A. Camargo et al. "2D Photonic crystal thermo-optic switch based on AlGaAs/GaAs epitaxial structure" Opt. Exp. 12, 588 (2004): doi:10.1364/OPEX.12.000588

Mach Zehnder

Mach Zehnder Modulators

E.A. Camargo et al. "Highly compact asymmetric Mach-Zehnder device based on channel guides in a two-dimensional photonic crystal" Appl. Opt. 45, 6507 (2006): doi:10.1364/AO.45.006507

Gunn diode

Planar Gunn Diodes

A. Khalid et al. "A Planar Gunn Diode Operating Above 100 GHz" IEEE Elec. Dev. Lett. 28, 849 (2007): doi:10.1109/LED.2007.904218

CPW

Elevated Coplanar Waveguides

F. Aghamoradi et al. "Performance enhancement of millimetre-wave resonators using elevated CPW" Elec. Lett. 45, 1326 (2009): doi:10.1049/el.2009.2348

PV

Intermediate Bandgap Photovoltaics

A. Marti et al. "Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell" Phys. Rev. Lett. 97, 247701 (2006): doi:10.1103/PhysRevLett.97.247701

PV

Intermediate Bandgap Photovoltaics

A. Luque et al. "Multiple levels in intermediate band solar cells" Appl. Phys. Lett. 96, 013501 (2010): doi:10.1063/1.3280387

PV

Intermediate Bandgap Photovoltaics

E. Antolin et al. "Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell" J. Appl. Phys. 108, 064513 (2010): doi:10.1063/1.3468520

PV

Photonic Crystal GaN LEDs for Improved Efficiency White Lighting

A.Z. Khokhar et al. "Nanofabrication of gallium nitride photonic crystal light-emitting diodes" Microelec. Eng. 87, 2200 (2010): doi:10.1016/j.mee.2010.02.003

QCL

Mid-infrared Quantum Cascade Lasers

C.C. Nshii et al. "A unidirectional quantum cascade ring laser" Appl. Phys. Lett. 97, 231107 (2010): doi:10.1063/1.3524200