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STS

STS ICP RIE

This is a 150 mm high density plasma tool with load-lock mainly used for deep Si etching using the Bosch process. The tool is used for a range of MEMS, NEMS and silicon optoelectronic & nanoelectronic research.

Gases: SF6, C4F8, N2, Ar, He, O2

Materials etched: Si and SOI (Bosch process, mixed process), Ge, SiGe

Estrelas

Oxford Instruments Estelas 100 ICP RIE Deep Silicon Etch Tool

This is a 200 mm high density plasma tool with load-lock mainly used for deep Si etching using the Bosch process with silicon etch rates up to 30 µm/min. The tool is used for a range of MEMS, NEMS and silicon optoelectronic & nanoelectronic research.

Gases: SF6, C4F8, N2, Ar, He, O2

Materials etched: Si and SOI (Bosch process, mixed process), Ge, SiGe

System 100 ICP

Oxford Instruments PlasmaPro System 100 ICP180 RIE

These are load locked RIE tools with cooled / heated stages and viewing ports with interferometers to monitor the etch depth. An ICP source is used for high density plamas for deep etching of semiconductor materials. Details

Gases: Cl2, BCl3, HBr, SiCl4, CH4, CF4, O2, N2, Ar, low flow O2, H2

Materials etched: III-V etching, GaAs, AlGaAs, InGaAs, InP, GaN, AlGaN, high-K, low damage nitride, Au, Pt, Pd, Al, Ti

System 100

Oxford Instruments RIE100

These are load locked RIE tools with cooled / heated stages and viewing ports with interferometers to monitor the etch depth.

Gases: SiCl4, CHF3, SF6, SiF4, C2F6, N2, Ar, O2, H2,

Materials etched: III-V etching, GaAs, AlGaAs, GaN, AlGaN, high-K, low damage nitride, Au, Pt, Pd, Al, Ti

System 100

Oxford Instruments RIE100

These are load locked RIE tools with cooled / heated stages and viewing ports with interferometers to monitor the etch depth.

Gases: SiCl4, CHF3, SF6, SiF4, C2F6, N2, Ar, O2, H2,

Materials etched: III-V etching, GaAs, AlGaAs, GaN, AlGaN, high-K, low damage nitride, Au, Pt, Pd, Al, Ti

RIE80plus

Oxford Instruments RIE80+

This is an open loaded RIE tool with a 600 W rf generator, a heated stage and viewing port with interferometer to monitor the etch depth.

Gases: SF6, CHF3, CF4, C2F6, N2, Ar, O2

Materials etched: SiO2, Si3N4, quartz, Si, Ge, SiGe

BP80 RIE

BP80 RIE

This is an open loaded RIE tool running fluorine chemistry for etching insulators.

Gases: CHF3, SF6, C2F6, N2, O2, H2,

Materials etched: SiO2, Si3N4, quartz, Si

ET340

ET340

This is an open loaded RIE tool for etching In containing materials using methane and hydrogen gases.

Gases: CH4, H2, CHF3, C2F6, Ar, N2, O2, CF4&O2

Materials etched: III-V materials with In, InP, InGaAs, InGaAsP, AlInAs, GaN, CdTe, ZnSe, NiFe, Fe and Co

Wet Bench

Wet Etching

We have a significant number of fume cupboards and lamar flow cupboards allowing a large range of chemical etching and cleaning including HF, KOH reflux, RCA and many III-V etches.

System 100 ICP

Oxford Instruments PlasmaPro System 100 ICP Cobra RIE

This is a 200 mm load locked RIE tools with cooled / heated stages and viewing ports with interferometers to monitor the etch depth. An ICP source is used for high density plamas for deep etching of semiconductor materials. The tool has arrived but is being installed and the process capability being developed. The tool is load locked on a cluster tool robot with direct access to ALD and ICP PECVD by vacuum transfer. Details

Gases: Cl2, BCl3, HBr, SiCl4, CH4, CF4, N2, Ar, O2, low flow O2, H2

Materials etched: III-V etching, GaAs, AlGaAs, InGaAs, InP, GaN, AlGaN, high-K, low damage nitride, Au, Pt, Pd, Al, Ti