Glasgow a commercial Vistec VB6 and previous ran a Vistec EPBG5 electron beam lithography tool, over 35 years experience of electron beam lithography and holds world records for the smallest wire fabricated by electron beam lithography (3 nm width) and the best layer-to-layer alignment of any technique (0.46 nm rms).
The James Watt Nanofabrication Centre is one of the few places in the world with sub-10 nm single line capability and the appropriate dry etch and metal deposition processes to allow sub-10 nm features to be fabricated and integrated into devices.
We have sub-5 nm capability for single line lithography and have signficant experience of a variety of resist including polymethylmethacrylate (PMMA), hydrogen silsesquioxane (HSQ), ZEP, UVIII and NEB.
Both tools have laser interferometry stage position measurement allowing stitching of fields with sub-1 nm precision using proprietary techniques and the VB6 has an ultra-wide 1.3 mm field. We have a number of proprietary techniques to allow small features to be produced and significant experience of minimising tilt, stitching errors and proximity effects in designs.
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D.R.S. Cumming et al. "Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resist" Appl. Phys. Lett. 68, 322 (1996): doi:10.1063/1.116073
K.E. Docherty et al. "High robustness of correlation-based alignment with Penrose patterns to marker damage in electron beam lithography" Microelec. Eng. 86, 532 (2009): doi:10.1016/j.mee.2008.11.037
S. Bentley et al. "Two methods for realising 10 nm T-gate lithography" Microelec. Eng. 86, 1067 (2009): doi:10.1016/j.mee.2008.12.029
P. Steinmann and J.M.R. Weaver "Fabrication of sub-5 nm gaps between metallic electrodes using conventional lithographic techniques" J. Vac. Sci. Technol. 22(6), 3178 (2005): doi:110.1116/1.1808712
E. Martines et al. "Superhydrophobicity and Superhydrophilicity of Regular Nanopatterns" Nano Letters 5, 2097 (2005): doi:10.1021/nl051435t
M. Gnan et al. "Fabrication of low loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist" Elec. Lett. 44, 115 (2008): doi:10.1049/el:20082985