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While diamonds are a girl's best friend, diamond is also one of the best materials for engineers to make transistors with. Unique and highly desirable material properties such as a large bandgap, high intrinsic mobility and very high thermal conductivity deem diamond the ultimate material for high power/high frequency semiconductor device realisation.

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Recent advances in the growth and processing of electronic diamond have provided a glimpse into the potential device performance and applications that this exciting material system can provide. This combined with ultra small feature processing potential, points towards an ultra short gate length FET technology as the obvious choice for the application of such a unique material system.

Engineers from the University of Glasgow produced the world's smallest diamond transistor to highlight their world-leading nanotechnology expertise.

Using high quality single crystal diamond material supplied by Element Six Ltd along with the nanofabrication and high-resolution electron-beam lithographic capabilities of the James Watt Nanofabrication Centre, Dr David Moran and colleagues from the University's School of Engineering fabricated a 50 nm gate length transistor on a small diamond chip. This is the smallest device yet fabricated in the diamond system.

For further details please e-mail: David.Moran@glas gow.ac.uk

D.A.J. Moran et al. "Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications" Microelec. Eng. 8, 1067 (2009): doi:10.1016/j.mee.2010.11.029