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STS

Oxford Instruments System 100 ICP 180 PECVD

This is a high density plasma tool with load-lock mainly used room temperature deposition of low stress Si3N4. 5 nm thick films have a breakdown voltage of 4 x 106 V/cm.

Gases: SiH4, N2O, N2, Ar, He, O2, CF4&O2

PECVD

Oxford Instruments PECVD 80+

This is an open loaded PECVD tool configure to deposit Si3N4 at up to 300 oC.

Gases: SiH4, N2O, N2, NH3, Ar, He, O2, CF4&O2

PECVD

Oxford Instruments PECVD 80+

This is an open loaded PECVD tool configure to deposit SiO2 at up to 700 oC.

Gases: SiH4, N2O, N2, NH3, Ar, He, O2, CF4&O2

ICP2

Oxford Instruments System 100 ICP 380 PECVD

This is a 200 mm high density plasma tool with load-lock mainly used room temperature deposition of low stress Si3N4. 5 nm thick films have a breakdown voltage of 4 x 106 V/cm. The tool has arrived but is being installed and the process capability being developed. The tool is load locked on a cluster tool robot with direct access to ALD and chlorine chemistry ICP RIE by vacuum transfer. Details

Gases: SiH4, N2O, N2, Ar, He, O2, CF4&O2

ALD

Oxford Instruments FlexAL Atomic Layer Deposition

This is a 200 mm atomic layer deposition (ALD) tool with a plasma source and 400 oC heated stage. The tool has arrived but is being installed and the process capability being developed. The tool is load locked on a cluster tool robot with direct access to ICP PECVD and chlorine chemistry ICP RIE by vacuum transfer. Details

Processes being developed: Al2O3, HfO2, ZrO2, TiN, TaN, WN, AlN, Pt