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Oxford Instruments System 100 ICP 180 PECVD
This is a high density plasma tool with load-lock mainly used room temperature deposition of low stress Si3N4. 5 nm thick films have a breakdown voltage of 4 x 106 V/cm.
Gases: SiH4, N2O, N2, Ar, He, O2, CF4&O2
Oxford Instruments PECVD 80+
This is an open loaded PECVD tool configure to deposit Si3N4 at up to 300 oC.
Gases: SiH4, N2O, N2, NH3, Ar, He, O2, CF4&O2
Oxford Instruments PECVD 80+
This is an open loaded PECVD tool configure to deposit SiO2 at up to 700 oC.
Gases: SiH4, N2O, N2, NH3, Ar, He, O2, CF4&O2